MCH3446
Ordering number : ENN7765
N-Channel Silicon MOSFET
MCH3446
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±12
V
ID
2.5
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
V
PW≤10µs, duty cycle≤1%
10
A
Mounted on a ceramic board (900mm2!0.8mm)
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0
VDS=20V, VGS=0
Forward Transfer Admittance
VGS(off)
yfs
VGS= ±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Input Capacitance
typ
Cutoff Voltage
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
V
±10
µA
µA
1.3
V
70
95
mΩ
95
135
mΩ
130
198
mΩ
1
ID=0.4A, VGS=1.8V
VDS=10V, f=1MHz
Gate-to-Source Leakage Current
Unit
max
20
ID=1.5A, VGS=4V
ID=0.8A, VGS=2.5V
RDS(on)3
Ciss
Ratings
min
0.4
2.0
3.4
S
270
VDS=10V, f=1MHz
VDS=10V, f=1MHz
pF
60
Marking : ZX
pF
53
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62504 TS IM TA-100785 No.7765-1/4
