RN1101FT~RN1106FT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101FT, RN1102FT, RN1103FT
RN1104FT, RN1105FT, RN1106FT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
•
High-density mount is possible because of devices housed in very thin
TESM packages.
•
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
•
Wide range of resistor values are available to use in various circuit
designs.
•
Complementary to RN2101FT~RN2106FT
Equivalent Circuit and Bias Resistor Values
C
4.7
10
10
RN1103FT
22
22
47
47
RN1105FT
2.2
47
RN1106FT
R2
4.7
RN1102FT
E
R2 (kΩ)
RN1104FT
B
R1 (kΩ)
RN1101FT
R1
Type No.
4.7
47
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN1101FT~1106FT
RN1101FT~1104FT
RN1105FT, RN1106FT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
10
5
V
IC
RN1101FT~1106FT
100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
