MG100J6ES50
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J6ES50
Unit: mm
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance.
l 6 IGBTs built into 1 package.
l Enhancement-mode.
l High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A)
l Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 100A)
JEDEC
EIAJ
TOSHIBA
Equivalent Circuit
―
―
2-94A2A
Weight: 505g (Typ.)
000707EAA1
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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
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In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
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instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
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· The information contained herein is subject to change without notice.
2001-02-22
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