TC7SG126FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SG126FU
Bus Buffer with 3-STATE Output
Features
•
High-level output current
: ±8 mA (min) at VCC = 3.0 V
•
High-speed operation
: tpd = 2.4 ns (typ.)
at VCC = 3.3 V, CL = 15pF
•
Operating voltage range
: VCC = 0.9 to 3.6 V
•
5.5-V tolerant inputs.
•
3.6-V power down protection output.
•
ESD performance
: Machine model ≥ ±200 V
Human body model ≥ ±2000 V
Marking
Weight: 6.2 mg (typ.)
Pin Assignment (top view)
Product name
W
G 1
C
5 VCC
IN A 2
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 4.6
V
DC input voltage
VIN
−0.5 to 7.0
V
−0.5 to 4.6 (Note 1)
V
DC output voltage
VOUT
Input diode current
IIK
−20
Output diode current
IOK
−20
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
200
mW
Storage temperature
Tstg
−65 to 150
°C
Note:
−0.5 to VCC + 0.5 (Note 2)
mA
(Note 3)
mA
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
1
2011-03-10
TC7SG126FU
Electrical Characteristics
DC Characteristics
Characteristic
Symbol
Ta = 25°C
Test Condition
Ta = −40 to 85°C
Min
Typ.
Max
Min
Max
0.9
VCC
⎯
⎯
VCC
VCC
× 0.7
⎯
⎯
VCC
× 0.7
⎯
1.4 to 1.6
VCC
× 0.65
⎯
⎯
VCC
× 0.65
⎯
1.65 to
1.95
VCC
× 0.65
⎯
⎯
VCC
× 0.65
⎯
2.3 to 2.7
1.7
⎯
⎯
1.7
⎯
3.0 to 3.6
2.0
⎯
⎯
2.0
⎯
0.9
⎯
⎯
GND
⎯
GND
1.1 to 1.3
⎯
⎯
VCC
× 0.3
⎯
VCC
× 0.3
1.4 to 1.6
⎯
⎯
VCC
× 0.35
⎯
VCC
× 0.35
1.65 to
1.95
⎯
⎯
VCC
× 0.35
⎯
VCC
× 0.35
2.3 to 2.7
⎯
⎯
0.7
⎯
0.7
3.0 to 3.6
⎯
⎯
0.8
⎯
0.8
IOH =−0.02 mA
0.9
0.75
⎯
⎯
0.75
⎯
IOH = −0.3 mA
1.1 to 1.3
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −1.7 mA
1.4 to 1.6
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −3.0 mA
1.65 to
1.95
VCC
-0.45
⎯
⎯
VCC
-0.45
⎯
IOH = −4.0 mA
2.3 to 2.7
2.0
⎯
⎯
2.0
⎯
IOH = −8.0 mA
3.0 to 3.6
2.48
⎯
⎯
2.48
⎯
IOL = 0.02 mA
0.9
⎯
⎯
0.1
⎯
0.1
IOL = 0.3 mA
1.1 to 1.3
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
VIN = VIL IOL = 1.7 mA
or VIH
1.4 to 1.6
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 3.0 mA
1.65 to
1.95
⎯
⎯
0.45
⎯
0.45
IOL = 4.0 mA
2.3 to 2.7
⎯
⎯
0.4
⎯
0.4
IOL = 8.0 mA
3.0 to 3.6
⎯
⎯
0.4
⎯
0.4
⎯
VIH
Input voltage
Low level
High level
Output voltage
Low level
⎯
VIL
VOH
VOL
Unit
⎯
1.1 to 1.3
High level
VCC (V)
VIN = VIH
V
V
IIN
VIN = 0 to 5.5V
0 to 3.6
⎯
⎯
±0.1
⎯
±1.0
μA
IOZ
VIN = VIH or VIL
VOUT = 0 to 3.6V
0.9 to 3.6
⎯
⎯
1.0
⎯
10.0
μA
Power off leakage current
IOFF
VIN = 0 to 5.5V
VOUT = 0 to 3.6V
0.0
⎯
⎯
1.0
⎯
10.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
3.6
⎯
⎯
1.0
⎯
10.0
μA
Input leakage current
3-state
current
output
off-state
3
2011-03-10
