1SS398
TOSHIBA Diode
Silicon Epitaxial Planar Diode
1SS398
High-Voltage, High-Speed Switching Applications
Low forward voltage:
Unit: mm
VF = 1.0 V (typ.) @ IF = 100 mA
Fast reverse recovery time: trr = 0.5 μs (typ.)
Small total capacitance:
CT = 2.5 pF (typ.)
Small package:
SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
IFSM
2*
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Tstg
−55 to 125
°C
Maximum (peak) reverse Voltage
Surge current (10ms)
Storage temperature range
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 12 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
―
VF (2)
Characteristic
Min
Typ.
Max
IF = 10 mA
―
0.8
―
―
IF = 100 mA
―
1.0
1.3
IR (1)
―
VR = 300 V
―
―
0.05
IR (2)
―
VR = 400 V
―
―
0.1
Total capacitance
CT
―
VR = 0 V, f = 1 MHz
―
2.5
5.0
pF
Reverse recovery time
trr
―
IF = 10 mA
―
0.5
―
μs
Forward voltage
Reverse current
Test Condition
1
(Fig.1)
Unit
V
μA
2009-04-02
