HN1C01FU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01FU
Unit: mm
Audio Frequency General Purpose Amplifier Applications
Small package (Dual type)
High voltage and high current
: VCEO = 50V, IC = 150mA (max)
High hFE : hFE = 120~400
Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
PC*
200
mW
Tj
125
°C
Tstg
−55~125
°C
Collector power dissipation
Junction temperature
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Symbol
Test
Circuit
Collector cut-off current
ICBO
―
Emitter cut-off current
IEBO
DC current gain
Collector-emitter
saturation voltage
Characteristic
Transition frequency
Collector output capacitance
Test Condition
Min
Typ.
Max
Unit
VCB = 60V, IE = 0
―
―
0.1
μA
―
VEB = 5V, IC = 0
―
―
0.1
μA
hFE (Note)
―
VCE = 6V, IC = 2mA
120
―
400
VCE (sat)
―
IC = 100mA, IB = 10mA
―
0.1
0.25
V
fT
―
VCE = 10V, IC = 1mA
80
―
―
MHz
Cob
―
VCB = 10V, IE = 0, f = 1MHz
―
2
3.5
pF
Note: hFE Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
1
2007-11-01