MOTOROLA
Freescale Semiconductor, Inc.
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by MCM69F618C/D
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc...
64K x 18 Bit Flow–Through
BurstRAM Synchronous
Fast Static RAM
MCM69F618C
The MCM69F618C is a 1M–bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the 68K Family,
PowerPC™, 486, i960™, and Pentium™ microprocessors. It is organized as 64K
words of 18 bits each. This device integrates input registers, a 2–bit address
,
counter, and high speed SRAM onto a single monolithic circuit for reduced parts
OR
count in cache data RAM applications. Synchronous design allows precise cycle
T
control with the use of an external clock (K). BiCMOS circuitry reduces the overall
UC
power consumption of the integrated functions for greater reliability.
D
Addresses (SA), data inputs (DQx), and all control signals except output N
O
enable (G) and Linear Burst Order (LBO) are clock (K) controlled through
IC
M
positive–edge–triggered noninverting registers.
SE
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
E sequence
addresses can be generated internally by the MCM69F618C L
(burst
operates in linear or interleaved mode dependent upon the A
C state of LBO) and
S
controlled by the burst address advance (ADV) input pin.
EE
Write cycles are internally self–timed and initiated by the rising edge of the
R
clock (K) input. This feature eliminates complexF
off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
BY
D
Synchronous byte write (SBx), synchronous global write (SGW), and synE
chronous write enable SW are provided to allow writes to either individual bytes
IV
or to both bytes. The two bytesH designated as “a” and “b”. SBa controls DQa
are
RC
and SBb controls DQb. Individual bytes are written if the selected byte writes SBx
A
are asserted with SW. Both bytes are written if either SGW is asserted or if all SBx
and SW are asserted.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
The MCM69F618C operates from a 3.3 V power supply and all inputs and
outputs are LVTTL compatible and 5 V tolerant.
IN
C.
TQ PACKAGE
TQFP
CASE 983A–01
• MCM69F618C–7.5 = 7.5 ns Access / 12 ns Cycle
MCM69F618C–8 = 8 ns Access / 12 ns Cycle
MCM69F618C–8.5 = 8.5 ns Access / 12 ns Cycle
MCM69F618C–9 = 9 ns Access / 12 ns Cycle
MCM69F618C–10 = 10 ns Access / 15 ns Cycle
MCM69F618C–12= 12 ns Access / 16.6 ns Cycle
• Single 3.3 V + 10%, – 5% Power Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• 5 V Tolerant on all Pins (Inputs and I/Os)
• 100–Pin TQFP Package
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
i960 and Pentium are trademarks of Intel Corp.
REV 4
3/23/98
© Motorola, Inc. 1999
MOTOROLA FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM69F618C
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