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DSEE29-12CC
DSEE29-12CC V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 600 V 30 A 35 ns 3 DSEE29-12CC Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: ISOPLUS220 ●rIndustry standard outline ●rDCB isolated backside ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current min. typ. max. Unit threshold voltage rF slope resistance 30 A TVJ = 25 °C 1.62 V 60 A 1.95 V 30 A 1.27 V IF = average forward current mA IF = I FAV 1 IF = VF0 500 TVJ = 150 °C IF = VF V µA VR = 600 V forward voltage 600 VR = 600 V TVJ = 25 °C TVJ = 25 °C 60 A 1.58 V TC = 130°C 30 A TVJ = 175°C 1.00 V rectangular TVJ = 150 °C d = 0.5 for power loss calculation only R thJC mΩ K/W 175 °C TC = 25 °C 165 W TVJ = 45°C 200 A thermal resistance junction to case T VJ 10 0.90 virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM -55 max. reverse recovery current t = 10 ms (50 Hz), sine TVJ = 25 °C IF = 30 A; VR = 300 V 17 A TVJ = 100°C 29 A CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved -di F /dt = 600 A/µs VR = 400 V; f = 1 MHz TVJ = 25 °C 35 ns TVJ = 100°C t rr 90 ns TVJ = 25 °C 26 pF Data according to IEC 60747and per diode unless otherwise specified 20110215a
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