Switching Diodes
MA3X152K
Silicon epitaxial planar type
Unit : mm
+ 0.2
For switching circuits
2.8 − 0.3
1.45
0.95
0.65 ± 0.15
1
3
+ 0.1
2
VR
80
V
Peak reverse voltage
VRM
80
Forward current (DC)
IF
100
mA
Peak forward current
IFM
225
mA
Non-repetitive peak forward
surge current*
IFSM
500
mA
+ 0.1
V
Junction temperature
Tj
150
Tstg
−55 to +150
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
°C
Storage temperature
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Reverse voltage (DC)
0.16 − 0.06
Unit
0.8
Rating
+ 0.2
Symbol
1.1 − 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter
0.4 − 0.05
• Short reverse recovery time trr
• Small terminal capacitance, Ct
1.5
0.95
+ 0.2
2.9 − 0.05
I Features
1.9 ± 0.2
0.65 ± 0.15
+ 0.25
− 0.05
°C
Marking Symbol: MI
Internal Connection
Note) * : t = 1 s
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.1
µA
0.95
1.2
V
Reverse current (DC)
IR
VR = 75 V
Forward voltage (DC)
VF
IF = 100 mA
Reverse voltage (DC)
VR
IR = 100 µA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
2
pF
Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
3
ns
80
V
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1