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XP162A11COPR-G
XP162A11C0PR-G ETR1125_003 Power MOSFET ■GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ■FEATURES ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN CONFIGURATION/ MARKING Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V : Rds(on) = 0.28Ω@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage : -4.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PRODUCT NAME x 1 1 2 G : Gate S : Source D : Drain PRODUCTS PACKAGE ORDER UNIT XP162A11C0PR SOT-89 1,000/Reel SOT-89 1,000/Reel XP162A11C0PR-G (*) (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. * x represents production lot number. ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ ■EQUIVALENT CIRCUIT PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss -30 V Gate-Source Voltage Vgss ±20 V Drain Current (DC) Id -2.5 A Drain Current (Pulse) Idp -10 A Reverse Drain Current Idr -2.5 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ * When implemented on a ceramic PCB 1/5
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