CMH05A
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH05A
Switching Mode Power Supply Applications
Unit: mm
•
Repetitive peak reverse voltage: VRRM = 400 V
•
•
•
•
Average forward current: IF (AV) = 1.0 A
Low forward voltage: VFM=1.8 V (Max.)
Very fast reverse recovery time: trr =35ns (Max.)
Suitable for compact assembly due to small surface-mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
400
V
Average forward current
IF (AV)
Peak one cycle surge forward current
(non-repetitive)
A
IFSM
10 (50 Hz)
A
Tj
−40~150
°C
Tstg
−40~150
°C
Junction temperature
Storage temperature range
Note 1: Tℓ＝125°C
1.0 (Note 1)
Device mounted on a ceramic board
board size: 50 mm × 50 mm
soldering land: 2 mm ×2 mm
board thickness:0.64t
JEDEC
―
JEITA
―
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
Weight: 0.023 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Symbol
Test Condition
Min
Typ.
Max
VFM (1)
IFM = 0.1 A (pulse test)
⎯
0.98
⎯
VFM (2)
IFM = 1.0 A (pulse test)
⎯
1.5
1.8
VRRM = 400 V (pulse test)
⎯
⎯
10
IRRM
Unit
V
μA
Reverse recovery time
trr
IF = 1 A, di/dt = −30 A/μs
⎯
⎯
35
ns
Forward recovery time
tfr
IF = 1.0 A
⎯
⎯
100
ns
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 t)
⎯
⎯
60
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
⎯
⎯
135
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 t)
⎯
⎯
210
⎯
⎯
16
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Rth (j-a)
⎯
Rth (j-ℓ)
1
°C/W
°C/W
2006-11-08
