HOME＞在庫検索＞在庫情報
CMH05ATE12L,Q
CMH05A TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type CMH05A Switching Mode Power Supply Applications Unit: mm • Repetitive peak reverse voltage: VRRM = 400 V • • • • Average forward current: IF (AV) = 1.0 A Low forward voltage: VFM=1.8 V (Max.) Very fast reverse recovery time: trr =35ns (Max.) Suitable for compact assembly due to small surface-mount package “M−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 400 V Average forward current IF (AV) Peak one cycle surge forward current (non-repetitive) A IFSM 10 (50 Hz) A Tj −40~150 °C Tstg −40~150 °C Junction temperature Storage temperature range Note 1: Tℓ＝125°C 1.0 (Note 1) Device mounted on a ceramic board board size: 50 mm × 50 mm soldering land: 2 mm ×2 mm board thickness:0.64t JEDEC ― JEITA ― Note 2: Using continuously under heavy loads (e.g. the application of TOSHIBA 3-4E1A high temperature/current/voltage and the significant change in Weight: 0.023 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Peak repetitive reverse current Symbol Test Condition Min Typ. Max VFM (1) IFM = 0.1 A (pulse test) ⎯ 0.98 ⎯ VFM (2) IFM = 1.0 A (pulse test) ⎯ 1.5 1.8 VRRM = 400 V (pulse test) ⎯ ⎯ 10 IRRM Unit V μA Reverse recovery time trr IF = 1 A, di/dt = −30 A/μs ⎯ ⎯ 35 ns Forward recovery time tfr IF = 1.0 A ⎯ ⎯ 100 ns Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 t) ⎯ ⎯ 60 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 t) ⎯ ⎯ 135 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 2.1 mm × 1.4 mm) (board thickness: 1.6 t) ⎯ ⎯ 210 ⎯ ⎯ 16 Thermal resistance (junction to ambient) Thermal resistance (junction to lead) Rth (j-a) ⎯ Rth (j-ℓ) 1 °C/W °C/W 2006-11-08
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
