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2SC5352
2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 4 A) • Unit: mm High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 10 Pulse ICP 15 IB 5 A PC 80 W TOSHIBA Tj 150 °C Weight: 4.7 g (typ.) Tstg −55 to 150 °C Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range A JEDEC ― JEITA ― 2-16C1A Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-10-19
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