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PHB108NQ03LT
PHB108NQ03LT N-channel TrenchMOS logic level FET Rev. 04 — 2 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Simple gate drive required due to low gate charge 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 25 V ID drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 - - 75 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 187 W VGS = 4.5 V; ID = 25 A; VDS = 12 V; Tj = 25 °C; see Figure 12; see Figure 13 - 5.6 - nC VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 10; see Figure 11 - 5.3 6 mΩ Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance
NXP
NXP Semiconductors
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