FDD5670
60V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
extremely low RDS(ON) in a small package.
• 52 A, 60 V
RDS(ON) = 15 mΩ @ VGS = 10 V
RDS(ON) = 18 mΩ @ VGS = 6 V
• Low gate charge
• Fast switching
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• Motor drives
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
A
– Continuous
(Note 3)
150
(Note 1)
83
(Note 1a)
PD
52
(Note 1a)
– Pulsed
3.8
Power Dissipation for Single Operation
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.6
-55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
1.8
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5670
FDD5670
13’’
16mm
2500 units
©2011 Fairchild Semiconductor Corporation
FDD5670 Rev B2
FDD5670
November 2011
FDD5670
Typical Characteristics
2
VGS = 10V
5.0V
6.0V
50
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
4.5V
40
4.0V
30
20
10
3.5V
1.8
VGS = 4.0V
1.6
1.4
4.5V
5.0V
1.2
6.0V
10V
0.8
0
0
1
2
3
0
4
10
20
Figure 1. On-Region Characteristics.
40
50
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
1.8
ID =10A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
ID = 10 A
0.04
0.03
TA = 125oC
0.02
TA = 25oC
0.01
0
150
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
TA = -55oC
25oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
125oC
50
ID, DRAIN CURRENT (A)
7.0V
1
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD5670 Rev. B2
