FDD5680
N-Channel, PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
•
38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
RDS(on) = 0.025 Ω @ VGS = 6 V.
•
•
•
•
Fast switching speed.
•
Applications
Low gate charge (33nC typical).
High performance trench technology for extremely
low RDS(on).
DC/DC converter
Motor drives
D
D
G
G
S
S
TO-252
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Maximun Drain Current - Continuous
38
A
(Note 1)
(Note 1a)
Maximum Drain Current
- Pulsed
Maximum Power Dissipation @ TC = 25oC
PD
8.5
100
60
(Note 1a)
2.8
TA = 25oC
TJ, Tstg
(Note 1)
TA = 25oC
(Note 1b)
Operating and Storage Junction Temperature Range
W
1.3
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to- Case
(Note 1)
2.1
RθJA
Thermal Resistance, Junction-to- Ambient
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5680
FDD5680
13’’
16mm
2500
2000 Fairchild Semiconductor International
FDD5680, Rev. C
FDD5680
July 2000
FDD5680
Typical Characteristics
2.2
60
VGS = 10V
6.0V
50
2
5.0V
VGS = 4.0V
1.8
4.5V
40
1.6
4.5V
30
1.4
20
4.0V
5.0V
1.2
10
6.0V
7.0V
10V
1
3.5V
0.8
0
0
1
2
3
0
4
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.05
2
ID = 8.5A
VGS = 10V
1.8
ID = 4.3A
0.04
1.6
o
TA = 125 C
1.4
0.03
1.2
0.02
1
o
TA = 25 C
0.8
0.01
0.6
0.4
0
-50
-25
0
25
50
75
100
125
150
3
4
5
o
6
7
8
9
10
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
60
VGS = 0V
o
VDS = 5V
TA = -55 C
o
25 C
50
10
o
o
TA = 125 C
125 C
40
1
30
0.1
20
0.01
10
0.001
o
25 C
o
-55 C
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDD5680, Rev. C
