FDS6680S
30V N-Channel PowerTrench SyncFET™
General Description
Features
The FDS6680S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDS6680 in parallel with a Schottky diode.
•
11.5 A, 30 V.
•
Includes SyncFET Schottky body diode
•
Low gate charge (17nC typical)
•
High performance trench technology for extremely low
RDS(ON) and fast switching
•
High power and current handling capability
Applications
RDS(ON) = 0.011 Ω @ VGS = 10 V
RDS(ON) = 0.017 Ω @ VGS = 4.5 V
• DC/DC converter
• Motor drives
D
D
D
D
S
S
S
Absolute Maximum Ratings
Symbol
3
7
2
8
G
4
6
SO-8
5
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
11.5
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
– Continuous
– Pulsed
50
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6680S
FDS6680S
13’’
12mm
2500 units
2000 Fairchild Semiconductor Corporation
FDS6680S Rev C (W)
FDS6680S
September 2000
FDS6680S
Typical Characteristics
VGS = 10V
ID, DRAIN CURRENT (A)
5.0V
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
50
4.5V
4.0V
7.0V
30
3.5V
20
10
3.0V
1.8
VGS = 4.0V
1.6
4.5V
1.4
5.0V
1.2
6.0V
0
1
2
0
3
10
20
30
40
50
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
1.8
ID = 6A
ID = 11.5A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
0.8
0
1.4
1
0.6
0.2
-50
-25
0
25
50
75
0.03
0.02
TA = 100oC
0.01
TA = 25oC
0
100
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100oC
VDS = 5V
TA = -55oC
IS, REVERSE DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
7.0V
8.0V
1
25oC
40
30
20
10
VGS = 0V
1
TA = 100oC
0.1
25oC
-55oC
0.01
0.001
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680S Rev C (W)
