July 2012
FDS6680A
Single N-Channel, Logic Level, PowerTrench® MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
• 12.5 A, 30 V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
RDS(ON) = 9.5 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Ultra-low gate charge
low RDS(ON)
• High power and current handling capability
DD
D
D
5
6
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
VDSS
Ratings
– Continuous
V
±20
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
Units
30
Gate-Source Voltage
Drain Current
1
o
Parameter
ID
2
TA=25 C unless otherwise noted
Drain-Source Voltage
VGSS
3
8
G
S G
S S
S S
S
SO-8
4
7
D
D
D
D
12.5
(Note 1a)
2.5
(Note 1b)
PD
1.2
(Note 1c)
TJ, TSTG
A
50
Operating and Storage Junction Temperature Range
W
1.0
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Case
(Note 1a)
50
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6680A
FDS6680A
13’’
12mm
2500 units
©2012 Fairchild Semiconductor Corporation
FDS6680A Rev F2(W)
FDS6680A
November 2004
FDS6680A
Typical Characteristics
50
2.2
VGS = 10V
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
40
4.0V
4.5V
3.5V
30
20
10
3.0V
0
0.5
1
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
1.4
4.0V
4.5V
1.2
5.0V
6.0V
10V
1
2
0
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.03
ID = 12.5A
VGS = 10V
ID = 6.2A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
1.8
0.8
0
1.4
1.2
1
0.8
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.005
0.6
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
2
150
Figure 3. On-Resist ance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
2
40
30
TA = 125oC
o
-55 C
20
10
25oC
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680A Rev F2(W)
