FGH50N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of
the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially designed for:
• 100kHz Operation at 390V, 40A
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• 200kHZ Operation at 390V, 25A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 70nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
• Low Conduction Loss
IGBT formerly Developmental Type TA49342
Package
TO-247
Symbol
E
C
C
G
G
COLLECTOR
(Back-Metal)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
75
A
IC110
Collector Current Continuous, TC = 110°C
60
A
Collector Current Pulsed (Note 1)
240
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
ICM
150A at 600V
EAS
Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V
480
PD
Power Dissipation Total TC = 25°C
463
W
Power Dissipation Derating TC > 25°C
3.7
W/°C
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
TJ
TSTG
mJ
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH50N6S2 RevA3
FGH50N6S2
August 2003
TJ = 25°C unless otherwise noted
200
ICE, COLLECTOR TO EMITTER CURRENT (A)
120
100
80
PACKAGE LIMITED
60
40
20
0
TJ = 150oC, RG = 3Ω VGE = 15V, L = 100µH
,
150
100
50
0
25
50
75
100
125
0
150
100
TC , CASE TEMPERATURE (oC)
Figure 1. DC Collector Current vs Case
Temperature
300
400
500
14
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
TC = 75oC
300
VGE = 15V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.27oC/W, SEE NOTES
VGE = 10V
TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V
10
900
VCE = 390V, RG = 3Ω TJ = 125oC
,
12
800
10
700
8
600
ISC
500
6
400
4
tSC
300
2
200
0
10
1
700
600
Figure 2. Minimum Switching Safe Operating Area
700
fMAX, OPERATING FREQUENCY (kHz)
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
30
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
140
60
9
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
11
13
12
14
15
16
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
60
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FGH50N6S2
Typical Performance Curves
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
50
40
30
TJ = 25oC
20
TJ = 150oC
10
TJ = 125oC
0
DUTY CYCLE < 0.5%, VGE =10V
PULSE DURATION = 250µs
50
40
30
TJ = 25oC
20
TJ = 150oC
10
TJ = 125oC
0
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
0.50
0.75
1.00
1.25
1.50
1.75
2.0
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH50N6S2 RevA3