HOME＞在庫検索＞在庫情報
IRF7842TRPBF
IRF7842PbF Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current Base Part Number Package Type IRF7842PbF SO-8 HEXFET® Power MOSFET VDSS RDS(on) max : Qg (typ.) 40V 5.0m @VGS = 10V 33nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7842PbF IRF7842TRPbF Absolute Maximum Ratings Max. Units Drain-to-Source Voltage Parameter 40 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 14 IDM Pulsed Drain Current 140 PD @TA = 25°C Power Dissipation VDS c PD @TA = 70°C f Power Dissipation f TJ Linear Derating Factor Operating Junction and TSTG A Storage Temperature Range W 2.5 1.6 W/°C °C 0.02 -55 to + 150 Thermal Resistance Parameter RθJL RθJA Notes 1 g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units ––– 20 °C/W ––– 50 through are on page 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IR
International Rectifier
U.S.A
パワー・マネジメント向けの半導体製品を中心とする電気機器の製造販売やソリューションを提供する。
弊社からの見積回答メールの返信又はFAXにてお願いします。
