M93S66, M93S56, M93S46
4K/2K/1K (x16) Serial Microwire Bus EEPROM
with Block Protection
INDUSTRY STANDARD MICROWIRE BUS
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SINGLE ORGANIZATION by WORD (x16)
WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for M93Sx6 version
– 2.5V to 5.5V for M93Sx6-W version
– 1.8V to 3.6V for M93Sx6-R version
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 words)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD and LATCH-UP
PERFORMANCES
DESCRIPTION
This M93S46/S56/S66 specification covers a
range of 4K/2K/1K bit serial EEPROM products
respectively. In this text, products are referred to as
M93Sx6. The M93Sx6 is an Electrically Erasable
Programmable Memory (EEPROM) fabricated with
STMicroelectronics’s High Endurance Single
Polysilicon CMOS technology.
Table 1. Signal Names
S
Chip Select Input
D
Serial Data Input
Q
Serial Clock
PRE
Write Enable
VCC
8
1
TSSOP8 (DW)
169mil Width
Figure 1. Logic Diagram
VCC
D
C
Q
M93Sx6
Supply Voltage
VSS
SO8 (MN)
150mil Width
PSDIP8 (BN)
0.25mm Frame
Protect Enable
W
1
1
Serial Data Output
C
8
8
Ground
S
PRE
W
VSS
AI02020
February 1999
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