HOME>在庫検索>在庫情報
2SC5233-BTE85L,FPBF
2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C JEDEC Tstg −55~125 °C JEITA Storage temperature range ― SC-70 TOSHIBA 2-2E1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.006 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 2SC5233 3 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
弊社からの見積回答メールの返信又はFAXにてお願いします。