UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
TO-3PL
*Pb-free plating product number: 2SC5200L
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
PARAMETER
VCBO
VCEO
VEBO
IC
IB
V
V
V
A
A
PC
230
230
5
15
1.5
150
Junction Temperature
Storage Temperature Range
TJ
Tstg
150
-55 ~ 150
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tc=25℃)
PARAMETER
SYMBOL
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V(BR) CEO
VCE (sat)
VBE
ICBO
IEBO
hFE1
hFE2
fT
Cob
Transition Frequency
Collector Output Capacitance
TEST CONDITIONS
MIN
IC= 50mA, IB=0
IC= 8A, IB= 0.8A
VCE= 5V, IC= 7A
VCB = 230V, IE=0
VEB= 5V, IC=0
VCE= 5V, IC= 1A
VCE= 5V, IC= 7A
VCE= 5V, IC= 1A
VCB= 10V, IE=0, f=1MHz
230
MAX
0.40
1.0
55
35
TYP
3.0
1.5
5.0
5.0
160
60
30
200
UNIT
V
V
V
μA
μA
MHz
pF
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160
CLASSIFICATION OF HFE1
RANK
R
O
Range
55 ~ 110
80 ~ 160
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R214-005,A
