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MCH3309-TL-E
Ordering number : ENN6910 MCH3309 P-Channel Silicon MOSFET MCH3309 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2167 [MCH3309] 0.25 • 0.3 0.15 2 0.65 0.25 1 2.1 1.6 3 2.0 0.85 1 : Gate 2 : Source 3 : Drain 0.15 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol SANYO : MCPH3 Conditions Ratings Unit Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGSS ±10 V ID --1.5 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% --6.0 A 0.9 Mounted on a ceramic board (900mm2!0.8mm) W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--0.8A -0.4 RDS(on)1 RDS(on)2 ID=--0.8A, VGS=-4V ID=--0.4A, VGS=-2.5V Unit max --20 VGS(off) yfs Zero-Gate Voltage Drain Current V(BR)DSS Conditions IDSS IGSS Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance V --1 µA ±10 V 180 235 mΩ 240 1.6 µA --1.3 340 mΩ 2.3 S 290 pF Coss VDS=-10V, f=1MHz VDS=-10V, f=1MHz 40 pF Crss VDS=-10V, f=1MHz 25 pF Marking : JJ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11801 TS IM TA-3058 No.6910-1/4
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