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2SA1937
2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications • Unit: mm High voltage: VCEO = −600 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −600 V Collector-emitter voltage VCEO −600 V Emitter-base voltage VEBO −7 V DC IC −0.5 Pulse ICP −1 IB −0.25 Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1 10 A A W Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― TOSHIBA 2-7B1A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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