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W15NB50
STW15NB50 STH15NB50FI ® N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH™ MOSFET TYPE V DSS R DS(on) ID ST W15NB50 ST H15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A s s s s s s TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW 15NB50 V DS V DGR V GS Drain-source Voltage (V GS = 0) 500 V Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage 500 V ± 30 o ID Drain Current (continuous) at Tc = 25 C ID Drain Current (continuous) at Tc = 100 C IDM (•) Uni t ST H15NB50FI o 10.5 A 9.2 6.6 A dv/dt( 1 ) 58.4 58.4 A Total Dissipation at Tc = 25 C 190 80 W Derating F actor P t ot Drain Current (pulsed) V 14.6 0.64 1.52 W/ C o Peak Diode Recovery voltage slope V ISO Insulation Withstand Voltage (DC) T stg Storage T emperature Tj June 1998 Max. O perating Junction Temperature 4 4000 o V/ ns V -65 to 150 o C 150 o C 1/9
STM
STMicroelectronics NV
スイス
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