NDS9407
60V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
• –3.0 A, –60 V.
Applications
• Fast switching speed
• Power management
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 150 mΩ @ VGS = –10 V
RDS(ON) = 240 mΩ @ VGS = –4.5 V
• Low gate charge
• Load switch
• Battery protection
• High power and current handling capability
DD
D
D
5
6
G
S G
S
S
S S
S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
Drain Current
(Note 1a)
– Pulsed
V
±20
– Continuous
Units
–60
Gate-Source Voltage
ID
1
Ratings
Drain-Source Voltage
VGSS
2
TA=25oC unless otherwise noted
Parameter
VDSS
3
8
D
D
4
7
D
D
V
–3.0
A
–12
Maximum Power Dissipation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
PD
1.0
W
–55 to +175
°C
(Note 1a)
50
°C/W
(Note 1c)
TJ, TSTG
125
(Note 1)
25
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
NDS9407
NDS9407
13’’
12mm
2500 units
2002 Fairchild Semiconductor Corporation
NDS9407 Rev B1(W)
NDS9407
May 2002
