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FDD6680
FDD6680 / FDU6680 30V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. • 46 A, 30 V Applications • Fast Switching Speed • DC/DC converter • High performance trench technology for extremely low RDS(ON) RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V • Low gate charge • Motor Drives D D G S I-PAK (TO-251AA) D-PAK TO-252 (TO-252) G D S Absolute Maximum Ratings Symbol G S TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 46 A @TA=25°C (Note 1a) 12 Pulsed (Note 1a) 100 PD Power Dissipation @TC=25°C (Note 3) (Note 1a) 3.3 @TA=25°C (Note 1b) W 56 @TA=25°C 1.5 –55 to +175 °C (Note 1) 2.7 °C/W (Note 1a) 45 (Note 1b) TJ, TSTG 96 Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6680 FDD6680 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6680 FDU6680 I-PAK (TO-251) Tube N/A 75 ©2004 Fairchild Semiconductor Corporation FDD6680/FDU6680 Rev. C1(W) FDD6680/FDU6680 November 2004
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