MMBV3401LT1
Preferred Device
Silicon Pin Diode
This device is designed primarily for VHF band switching
applications but is also suitable for use in general−purpose switching
circuits. Supplied in a Surface Mount package.
Features
http://onsemi.com
• Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance − 0.7 pF (Typ) at VR = 20 Vdc
• Very Low Series Resistance at 100 MHz
3
Cathode
0.34 W (Typ) @ IF = 10 mAdc
1
Anode
• Pb−Free Packages are Available
3
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
35
Vdc
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
Junction Temperature
TJ
+125
°C
Tstg
−55 to +150
1
°C
Storage Temperature Range
200
2.0
2
mW
mW/°C
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
4D M
1
4D
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Shipping†
Device
Package
MMBV3401L
T1
SOT−23
3000 Tape & Reel
SOT−23
(Pb−Free)
3000 Tape & Reel
SOT−23
10,000 Tape & Reel
MMBV3401L
T1G
MMBV3401L
T3
MMBV3401L
T3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 5
1
Publication Order Number:
MMBV3401LT1/D
