Si2302DS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
ID (A)
0.085 @ VGS = 4.5 V
2.8
0.115 @ VGS = 2.5 V
20
rDS(on) (W)
2.4
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2302DS (A2)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"8
Unit
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain
TA= 25_C
TA= 70_C
Currenta
2.8
ID
IS
TA= 25_C
Power Dissipationb
TA= 70_C
Operating Junction and Storage Temperature Range
2.2
A
IDM
Continuous Source Current (Diode Conduction)b
V
10
1.6
1.25
PD
W
0.80
TJ, Tstg
–55 to 150
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
100
_C/W
RthJA
166
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70628
S-53600—Rev. D, 22-May-97
www.vishay.com S FaxBack 408-970-5600
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