HOME＞在庫検索＞在庫情報
SI2302DS-T1
Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 20 rDS(on) (W) 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "8 Unit Continuous Drain Current (TJ = 150_C)b Pulsed Drain TA= 25_C TA= 70_C Currenta 2.8 ID IS TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range 2.2 A IDM Continuous Source Current (Diode Conduction)b V 10 1.6 1.25 PD W 0.80 TJ, Tstg –55 to 150 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc 100 _C/W RthJA 166 Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70628 S-53600—Rev. D, 22-May-97 www.vishay.com S FaxBack 408-970-5600 2-1
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
