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UN2119-TX
Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.3 –0.1 1.1+0.2 –0.1 (R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 0 to 0.1 • UNR2110 • UNR2111 • UNR2112 • UNR2113 • UNR2114 • UNR2115 • UNR2116 • UNR2117 • UNR2118 • UNR2119 • UNR211D • UNR211E • UNR211F • UNR211H • UNR211L • UNR211M • UNR211N • UNR211T • UNR211V • UNR211Z 10˚ Marking Symbol (R1) (UN2110) 6L 47 kΩ (UN2111) 6A 10 kΩ (UN2112) 6B 22 kΩ (UN2113) 6C 47 kΩ (UN2114) 6D 10 kΩ (UN2115) 6E 10 kΩ (UN2116) 6F 4.7 kΩ (UN2117) 6H 22 kΩ (UN2118) 6I 0.51 kΩ (UN2119) 6K 1 kΩ (UN211D) 6M 47 kΩ (UN211E) 6N 47 kΩ (UN211F) 6O 4.7 kΩ (UN211H) 6P 2.2 kΩ (UN211L) 6Q 4.7 kΩ (UN211M) EI 2.2 kΩ (UN211N) EW 4.7 kΩ (UN211T) EY 22 kΩ (UN211V) FC 2.2 kΩ (UN211Z) FE 4.7 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 B C R2 E ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00006CED 1
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