BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
High switching speed: trr ≤ 4 ns
Reverse voltage: VR ≤ 75 V
Repetitive peak reverse voltage: VRRM ≤ 100 V
Repetitive peak forward current: IFRM ≤ 450 mA
Small hermetically sealed glass SMD package
1.3 Applications
High-speed switching
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
IF
forward voltage
trr
reverse recovery time
[2]
Unit
-
-
200
mA
-
450
mA
-
75
V
-
IF = 100 mA
Max
-
reverse voltage
VF
Typ
-
repetitive peak forward
current
VR
Min
[1]
forward current
IFRM
Conditions
-
1000
mV
-
-
4
ns
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
