BYW52, BYW53, BYW54, BYW55, BYW56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
949539
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
APPLICATIONS
Case: SOD-57
• Rectification, general purpose
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYW52
VR = 200 V; IFAV = 2 A
SOD-57
BYW53
VR = 400 V; IFAV = 2 A
SOD-57
BYW54
VR = 600 V; IFAV = 2 A
SOD-57
BYW55
VR = 800 V; IFAV = 2 A
SOD-57
BYW56
VR = 1000 V; IFAV = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
UNIT
200
V
VR = VRRM
400
V
BYW54
VR = VRRM
600
V
VR = VRRM
800
V
BYW56
Peak forward surge current
VALUE
BYW55
See electrical characteristics
SYMBOL
VR = VRRM
BYW53
Reverse voltage = repetitive peak
reverse voltage
PART
BYW52
VR = VRRM
1000
V
IFSM
50
A
tp = 10 ms, half sine wave
Repetitive peak forward current
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
12
A
IFAV
2
A
tp = 20 μs half sine wave, Tj = 175 °C
PR
1000
W
l(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
i2t
Pulse avalanche peak power
IFRM
ϕ = 180 °
Average forward current
8
A2s
Tj = Tstg
- 55 to + 175
°C
i2t-rating
Junction and storage temperature
range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
www.vishay.com
158
TEST CONDITION
SYMBOL
VALUE
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
UNIT
Document Number: 86049
Rev. 1.7, 25-Aug-10