This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3J1430G, MA3J143AG
Silicon epitaxial planar type
For switching circuits
■ Package
• Two isolated elements contained in one package, allowing highdensity mounting
• Two diodes are connected in series in the package
• Code
SMini3-F2
• Pin Name
M
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■ Features
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1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage MA3J1430G
Rating
VR
40
MA3J143AG
Maximum peak MA3J1430G
reverse voltage MA3J143AG
Forward current Single
V
80
VRM
40
V
80
IF
100
Series
IFM
■ Internal Connection
200
Series
■ Marking Symbol
MA3J1430G: MC
MA3J143AG: MP
mA
65
Single
Peak forward
current
Unit
mA
3
130
150
Junction temperature
Tstg
°C
−55 to +150
°C
Tj
Storage temperature
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
ce
/D
isc
on
tin
ue
Parameter
Forward voltage
VF
Reverse voltage
MA3J1430G
VR
MA3J143AG
MA3J1430G
en
MA3J143AG
Ma
int
Terminal capacitance
Reverse recovery time *3
Typ
IR = 100 µA
Max
Unit
1.2
V
40
V
80
VR = 40 V
100
VR = 75 V
IR
an
Reverse current
Min
IF = 100 mA
100
VR = 0 V, f = 1 MHz
Ct1 *1
5.5
Ct2 *2
trr1 *1
trr2 *2
nA
pF
3.0
IF = 10 mA, VR = 6 V
150
Irr = 0.1 IR , RL = 100 Ω
ns
9
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
3. *1: Between pins 2 and 3
tp
tr
t
*2: Between pins 1 and 3
10%
trr
IF
*3: trr measurement circuit
t
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: October 2007
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKF00080AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
