This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3J745EG
Silicon epitaxial planar type
For high speed switching
For wave detection
Package
Features
Code
SMini3-F2
Name
Pin
1: Anode 1
2: Anode 2
3: Cathode
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Single
Forward current
Double
Single
Peak forward current
Junction temperature
110
Tstg
Internal Connection
3
mA
150
Tj
Storage time
V
20
IFM
Double
V
30
IF
Marking Symbol: M3D
Unit
30
VRM
Rating
30
VR
Maximum peak reverse voltage
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Two elements are contained in one package, allowing highdensity
mounting
Low forward voltage VF , optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time trr
mA
125
2
°C
–55 to +125
1
°C
Electrical Characteristics Ta = 25°C±3°C
Symbol
VF1
Min
Typ
VF2
IR
ce
/D
isc
Reverse current
en
η
Ma
Detection efficiency
Ct
trr
int
Reverse recovery time *
an
Terminal capacitance
Max
Unit
0.3
IF = 1 mA
on
tin
Forward voltage
Conditions
ue
Parameter
V
IF = 30 mA
1.0
VR = 30 V
30
mA
VR = 1 V, f = 1 MHz
1.5
pF
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W
1.0
ns
VIN = 3 V(peak) , f = 30 MHz
RL = 3.9 kW, CL = 10 pF
65
%
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: October 2008
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKH00234AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
