MX29LV320MT/B
FEATURES
32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V
ONLY FLASH MEMORY
GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 4,194,304 x 8 / 2,097,152 x 16 switchable
• Sector structure
- 8KB (4KW) x 8 and 64KB(32KW) x 63
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent program or erase operation in the protected sector group
- Provides chip unprotect function to allow code changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word OTP area for permanent, secure identification
- Can be programmed and locked at factory or by customer
• Latch-up protected to 250mA from -1V to VCC + 1V
• Low VCC write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power supply Flash
• Minimum 100,000 erase/program cycle
• 20-year data retention
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access
• Program Suspend/Resume
- Suspend program operation to read other sectors
• Erase Suspend/Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data# polling & Toggle bits provide detection of program and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP#/ACC input
- Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
- ACC (high voltage) accelerates programming time
for higher throughput during system
PERFORMANCE
• High Performance
- Fast access time: 70R/90ns
- Page read time: 25ns
- Sector erase time: 0.5s (typ.)
- Effective write buffer word programming time: 22us
- 4 word/8 byte page read buffer
- 16 word/ 32 byte write buffer: reduces programming
time for multiple-word/byte updates
• Low Power Consumption
- Active read current: 18mA(typ.)
- Active write current: 50mA(typ.)
- Standby current: 20uA(typ.)
PACKAGE
• 44-pin SOP
• 48-pin TSOP
• 48-ball CSP
GENERAL DESCRIPTION
The MX29LV320MT/B is a 32-mega bit Flash memory
organized as 4M bytes of 8 bits or 2M bytes of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV320MT/B is packaged in 44-pin SOP, 48pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM
programmers.
The standard MX29LV320MT/B offers access time as
fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV320MT/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
P/N:PM1129
REV. 1.1, JUL. 14, 2005
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