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2SK2552J5
DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2552 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) G 0.8 ± 0.1 1.6 ± 0.1 • Compact package 0 to 0.1 S D • Includes diode and high resistance at G - S 0.2 +0.1 –0 0.6 0.5 0.5 1.0 1.6 ± 0.1 ORDERING INFORMATION PART NUMBER PACKAGE 2SK2552 0.75 ± 0.05 SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note1 EQUIVALENT CIRCUIT VDSX 20 V VGDO –20 V ID 10 mA IG 10 mA PT 200 mW Junction Temperature Tj 125 °C Storage Temperature Tstg –55 to +125 °C Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Note2 Drain Gate Source Notes 1. VGS = –1.0 V 2 2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15941EJ1V0DS00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan © 2002
NEC
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RENESAS
ルネサス エレクトロニクス株式会社
日本
2010年（平成22年）4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ＆ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI
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