PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016C1D
Document Title
256Kx16 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No.
History
Draft Data
Remark
Rev. 0.0
Initial release with Preliminary.
September. 7. 2001
Preliminary
Rev. 0.1
Package dimension modify on page 11.
Septermber.28. 2001
Preliminary
Rev. 0.2
Change Icc, Isb and Isb1
November, 3, 2001
Preliminary
November, 23, 2001
Preliminary
December, 18, 2001
Preliminary
Item
ICC(Commercial)
ICC(Industrial)
10ns
12ns
15ns
10ns
12ns
15ns
ISB
ISB1(Normal)
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
Rev. 0.3
1. Correct AC parameters : Read & Write Cycle
2. Corrrect Power part : Delete "P-Industrial,Low Power" part
3. Delete Data Retention Characteristics
Rev. 0.4
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
10ns
ICC(Industrial)
12ns
Previous
85mA
75mA
Current
75mA
65mA
Rev. 1.0
1. Final datasheet release.
2. Delete 12ns speed bin.
July, 09, 2002
Final
Rev. 2.0
1. Add the Lead Free Package type.
June. 20, 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c
hange the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
June 2003
