PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1C-C/C-L, K6R4016V1C-I/C-P
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No.
History
Draft Data
Remark
Rev. 0.0
Initial release with Preliminary.
Feb. 12. 1999
Preliminary
Rev. 1.0
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed I SB1 to 20mA
Mar. 29. 1999
Preliminary
Rev. 2.0
Relax D.C parameters.
Aug. 19. 1999
Preliminary
Mar. 27. 2000
Final
Item
ICC
Rev. 3.0
12ns
15ns
20ns
Previous
180mA
175mA
170mA
Current
200mA
195mA
190mA
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
Previous
ICC
Isb
Isb1
10ns
12ns
200mA
70mA
20mA
15ns
195mA
20ns
190mA
ICC
160mA
150mA
140mA
130mA
Current
Isb
Isb1
60mA
10mA
Rev. 4.0
Add Low Power-Ver.
Apr. 24. 2000
Final
Rev. 5.0
Delete 20ns speed bin
Sep. 24. 2001
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c
hange the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0
September 2001
