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IRFW840A-TM
3RZHU 026)(7 IRFW/I840A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V D2-PAK ♦ Lower RDS(ON): 0.638Ω (Typ.) I2-PAK 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Value Drain-to-Source Voltage Units V 500 Continuous Drain Current (TC=25°C) 8 Continuous Drain Current (TC=100°C) 5.1 A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (2) 640 mJ A A 32 (1) IAR Avalanche Current (1) 8 EAR Repetitive Avalanche Energy (1) 14.2 mJ dv/dt Peak Diode Recovery dv/dt (3) 3.5 V/ns Total Power Dissipation (TA=25°C) * 3.1 W Total Power Dissipation (TC=25°C) 142 W Linear Derating Factor 1.14 W/°C PD TJ , TSTG TL Operating Junction and - 55 to +150 Storage Temperature Range °C Maximum Lead Temp. for Soldering 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol RθJC Characteristic Typ. Max. Junction-to-Case -- 0.88 RθJA Junction-to-Ambient * -- 40 RθJA Junction-to-Ambient -- Units °C/W 62.5 * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation
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