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2SC2290A
2SC2290A TOSHIBA Transistor Silicon Npn Epitaxial Planar Type 2SC2290A 2~30MHz SSB Linear Power Amplifier Applications (Low Supply Voltage Use) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : ηC = 35% (Min.) Intermodulation Distortion : IMD = −30dB (Max.) Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCES 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Collector Power Dissipation PC 175 W Junction Temperature Tj 175 °C Tstg −65~175 °C Storage Temperature Range JEDEC EIAJ TOSHIBA Weight: 5.2g — — 2−13B1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking TOSHIBA 2SC2290 JAPAN Dot Lot No. 1 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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