JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
2SC2230A
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
FEATURES
High Breakdown Voltage
High DC Current Gain
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
0.1
A
PC
Collector Power Dissipation
800
mW
Thermal Resistance From Junction To Ambient
156
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
200
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
180
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=200V,IE=0
0.1
0.1
IEBO
VEB=5V,IC=0
hFE(1)
VCE=10V, IC=10mA
120
hFE(2)
VCE=10V, IC=50mA
Base-emitter voltage
VBE
VCE=10V, IC=1mA
Collector output capacitance
Cob
400
IC=50mA,IB=5mA
VCB=10V,IE=0, f=1MHz
Transition frequency
μA
80
VCE(sat)
Collector-emitter saturation voltage
μA
fT
VCE=10V,IC=10mA
0.5
0.7
50
V
7
0.5
V
pF
MHz
CLASSIFICATION OF hFE(1)
RANK
Y
GR
RANGE
120-240
200-400
A,Dec,2010
