FQP5N90
September 2000
QFET
TM
FQP5N90
900V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
•
•
•
•
•
•
5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 13 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
"
G!
G DS
ID
!
FQP Series
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP5N90
900
Drain Current
- Pulsed
Units
V
5.4
- Continuous (TC = 100°C)
IDM
"
"
TO-220
Absolute Maximum Ratings
Symbol
VDSS
! "
A
3.42
A
21.6
(Note 1)
A
± 30
V
660
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
5.4
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
15.8
4.0
158
1.27
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
©2000 Fairchild Semiconductor International
Max
0.79
Units
°C/W
Rev. A, September 2000