TECHNICAL DATA
PNP HIGH VOLTAGE SILICON TRANSISTOR
Qualified per MIL-PRF-19500/397
Devices
Qualified Level
2N3743
2N4930
JAN, JANTX
JANTXV
2N4931
MAXIMUM RATINGS
Ratings
Sym
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
VCEO
VCBO
VEBO
IC
@TA = +250C 1
@TC = +250C 2
Operating & Storage Junction Temperature Range
PT
TJ, Tstg
2N3743 2N4930 2N4931 Unit
300
300
200
250
200
250
5.0
200
1.0
5.0
-65 to +200
Vdc
Vdc
Vdc
mAdc
W
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance Junction-to-Case
RθJC
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
Max.
35
TO-39*
(TO-205AD)
Unit
C/W
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
300
200
250
V(BR)CBO
Max.
300
200
250
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 1.0 mAdc
Collector-Emitter Breakdown Voltage
IC = 100 µAdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc
Collector-Base Cutoff Current
VCB = 250 Vdc
VCB = 150 Vdc
VCB = 200 Vdc
2N3743
2N4930
2N4931
2N3743
2N4930
2N4931
Vdc
Vdc
V(BR)EBO
2N3743
2N4930
2N4931
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
5.0
Vdc
ICBO
250
250
250
ηAdc
120101
Page 1 of 2