MJE13004/13005
MJE13004/13005
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Value
: MJE13004
: MJE13005
600
700
: MJE13004
: MJE13005
VCEO
Units
V
V
Collector-Base Voltage
300
400
Collector-Emitter Voltage
V
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: MJE13004
: MJE13005
Test Condition
IC = 10mA, IB = 0
Min.
Typ.
Max.
300
400
Units
V
V
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE
*DC Current Gain
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
0.5
0.6
1
V
V
V
VBE (sat)
*Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
1.2
1.6
V
V
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 2A
IB1 = - IB2 = 0.4A
RL = 62.5Ω
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
1
10
8
mA
60
40
65
pF
4
MHz
0.8
µs
4
µs
0.9
µs
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001