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IRFP4242PBF
PD - 96966B IRFP4242PbF PDP MOSFET Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability Key Parameters VDS min 300 V VDS (Avalanche) typ. 360 RDS(ON) typ. @ 10V 49 V m: IRP max @ TC= 100°C 93 A TJ max 175 °C D D G G S D S TO-247AC G D S G a te D ra in S o u rc e Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Max. Units Gate-to-Source Voltage ±30 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 33 IDM Pulsed Drain Current 190 IRP @ TC = 100°C Repetitive Peak Current PD @TC = 25°C Power Dissipation 430 PD @TC = 100°C Power Dissipation 210 Linear Derating Factor 2.9 W/°C TJ Operating Junction and -40 to + 175 °C TSTG Storage Temperature Range Parameter VGS c g 93 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw x 300 W x 10lb in (1.1N m) N Thermal Resistance Parameter RθJC Junction-to-Case f Typ. Max. Units ––– 0.35 °C/W Notes through are on page 8 www.irf.com 1 09/14/07
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