PD - 97322
IRFP4368PbF
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
D
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S
ID (Package Limited)
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
75V
1.46mΩ
1.85mΩ
350Ac
195A
D
D
S
G
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
350c
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
250c
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
IDM
Pulsed Drain Current d
1280
PD @TC = 25°C
Maximum Power Dissipation
520
W
W/°C
V
Linear Derating Factor
3.4
VGS
Gate-to-Source Voltage
± 20
dv/dt
TJ
Peak Diode Recovery f
13
Operating Junction and
-55 to + 175
TSTG
A
Storage Temperature Range
V/ns
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR
Avalanche Current d
EAR
Repetitive Avalanche Energy g
430
mJ
See Fig. 14, 15, 22a, 22b
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
www.irf.com
Parameter
Typ.
Max.
Junction-to-Case k
–––
0.29
Case-to-Sink, Flat Greased Surface
0.24
–––
–––
40
Junction-to-Ambient jk
Units
°C/W
1
06/02/08
