HOME＞在庫検索＞在庫情報
BSX47
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX; (973) 376-8960 BSX45; BSX46; BSX47 NPN medium power transistors PINNING FEATURES • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V). 1 emitter base APPLICATIONS 2 3 collector, connected to case • General industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package. Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA PARAMETER SYMBOL VCBO collector-base voltage CONDITIONS MIN. TYP. MAX. UNIT open emitter BSX45 _ - 80 V BSX46 - - 100 V - - 120 V BSX45 - - 40 V BSX46 BSX47 - - 60 V - - 80 V BSX47 VCEO collector-emitter voltage open base - ICM peak collector current Plot total power dissipation Tcase < 25 °C hFE DC current gain - 1.5 A - - 6.25 W lc = 1 00 mA; VCE = 1 V BSX45-10; BSX46-10; BSX47-10 fi 63 100 160 BSX45-16; BSX46-16; BSX47-16 100 160 250 - - transition frequency lc = 50 mA; VCE = 10 V; f = 100 MHz 50 MHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
