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2SA1426-Y
2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Unit: mm Complementary to 2SC3666. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Storage temperature range Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-7D101A temperature/current/voltage and the significant change in Weight: 0.2 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21
TOSHIBA
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